Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

11 results

Conference Proceedings

1. Preparation of Ultrathin Oxide Films by Low-Temperature Remote Plasma-Assisted Process

Niimi, H. ; Koh, K. ; Lucovsky, G.

Pub. info.:	Proceedings of the eleventh International Symposium on Plasma Processing. pp.623-630, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-12

Conference Proceedings

2. Controlled Nitrogen Incorporation at Si-SiO2 Interfaces by Re- mote Plasma Assisted Processing

Koh, K. ; Niimi, H. ; Lucovsky, G.

Pub. info.:	Proceedings of the eleventh International Symposium on Plasma Processing. pp.631-638, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-12

Conference Proceedings

3. Controlled Incorporation of Nitrogen at the Top Surface of Silicon Oxide Gate Dielectrics

Niimi, H. ; Koh, K. ; Lucovsky, G.

Pub. info.:	Amorphous and crystalline insulating thin films--1996 : symposium held December 2-4, 1996, Boston, Massachusetts, U.S.A.. pp.103-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	446

Conference Proceedings

4. Reaction Pathways for Nitrogen Incorporation at Si-SiO2 Interfaces

Koh, K. ; Niimi, H. ; Lucovsky, G.

Pub. info.:	Amorphous and crystalline insulating thin films--1996 : symposium held December 2-4, 1996, Boston, Massachusetts, U.S.A.. pp.267-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	446

Conference Proceedings

5. Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing

Hattangady, S. V. ; Niimi, H. ; Gandhi, S. ; Lucovsky, G.

Pub. info.:	Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A.. pp.213-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	387

Conference Proceedings

6. Ultrathin Silicon Oxide and Nitride - Silicon Interface States

Brillson, L. J. ; Young, A. P. ; Schafer, J. ; Niimi, H. ; Lucovsky, G.

Pub. info.:	Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.. pp.549-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	567

Conference Proceedings

7. Cathodoluminescence Studies of Si-SiO2 Interfaces Prepared by Plasma-Assisted Oxidation and Subjected to Post-Oxidation Rapid Thermal Annealing

Schafer, J. ; Young, A. P. ; Brillson, L. J. ; Niimi, H. ; Lucovsky, G.

Pub. info.:	Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.151-, 1998. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	525

Conference Proceedings

8. The Effects of Interfacial Suboxide Transition Regions On Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics

Yang, H. ; Niimi, H. ; Wu, Y. ; Lucovsky, G.

Pub. info.:	Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.. pp.241-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	567

Conference Proceedings

9. SILICON OXYNITRIDE AND OXIDE-NITRIDE-OXIDE GATE DIELECTRICS BY CONBINED PLASMA-RAPID THERMAL PROCESSING

Ma, Y. ; Hattangady, S. V. ; Yasuda, T. ; Niimi, H. ; Gandhi, S. ; Lucovsky, G.

Pub. info.:	Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A.. pp.169-, 1994. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	342

10.

Conference Proceedings

10. Nitrogen at Si-SiO2 Interfaces: Chemical Bonding and Electrical Performance

Lucovsky, G. ; Niimi, H. ; Koh, K. ; Lee, D.R. ; Jing, Z.

Pub. info.:	The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface. pp.441-455, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-1

11 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by:

Author: Niimi, H.