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12 results

Conference Proceedings

1. Symmetries of Hydrogen-Associated Centers in Silicon

Nielsen,B.Bech ; Olajos,J. ; Grimmeiss,H.G.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part3 pp.1003-1008, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

2. The hydrogen-saturated self-interstitial iu silicon and germanium

Budde,M. ; Nielsen,B.Bech ; Leary,P. ; Goss,J. ; Jones,R. ; Briddon,P.R. ; Oberg,S. ; Breuer,S.J.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.35-40, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

3. Substitutional carbon in Ge and Si1-xGex

Hoffmann,L. ; Bach,J.C. ; Hansen,J.Lundsgaard ; Larsen,A.Nylandsted ; Nielsen,B.Bech ; Leary,P. ; Jones,R. ; Oberg,S.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.97-102, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

4. Observation and Theory of the H2 Defect in Silicon

Nielsen,B.Bech ; Holbech,J.D. ; Jones,R. ; Sitch,P. ; Oberg,S.(invited)

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.845-852, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

5. The Nitrogen Pair in Crystalline Silicon Studied by Ion Channeling

Rasmussen,F.Berg ; Nielsen,B.Bech ; Jones,R. ; Oberg,S.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1221-1226, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

6. Identification of VH in silicon by EPR

Johannesen,P. ; Byberg,J.R. ; Nielsen,B.Bech ; Stallinga,P. ; Nielsen,K.Bonde

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.515-520, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

7. EPR Experiments on Hydrogen-Implanted Silicon Crystals:Annealing Properties of Bond Center Hydrogen

Nielsen,B.Bech ; Nielsen,K.Bonde ; Byberg,J.R.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.909-914, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

8. Local vibrational modes of a weakly bound O-H complexes in Si.(Invited)

Nielsen,B.Bech ; Tanderup,K. ; Budde,M. ; Nieisen,K.Bonde ; Lindstrom,J.L. ; Jones,R. ; Oberg,S. ; Hourahine,B. ; Briddon,P.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.391-398, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

9. The H2 Defect in Crystalline Germaniium

Budde,M. ; Nielsen,B.Bech ; Jones,R. ; Oberg,S. ; Goss,S.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.879-884, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

10.

Conference Proceedings

10. Low-temperature migration of hydrcgen and iuteractioll with oxygen

Nielsen,K.Bonde ; Nielsen,B.Bech ; Hansen,J.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.271-276, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

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