1.

Conference Proceedings
Conference Proceedings
1. Time-resolved photoluminescence studies of Al-rich AlGaN alloys
Li, J. ; Nam, K.B. ; Oder, T.N. ; Kim, K.H. ; Nakarmi, M.L. ; Lin, J.Y. ; Jiang, H.X.
Pub. info.: Ultrafast phenomena in semiconductors VI : 21, 24-25 January, 2002, San Jose, USA.  pp.250-257,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4643
2.

Conference Proceedings
Conference Proceedings
2. Delta-Doped AlGaN/GaN Heterostructure Field-Effect Transistors With Incorporation of AIN Epilayers
Fan, Z.Y. ; Nakarmi, M.L. ; Lin, J.Y. ; Jiang, H.X.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.101-106,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
3.

Conference Proceedings
Conference Proceedings
3. Synthesis and Characterization of Ferromagnetic AIN and AIGaN Layers
Frazier, R.M. ; Thaler, G.T. ; Abernathy, C.R. ; Pearton, S.J. ; Nakarmi, M.L. ; Lin, J.Y. ; Jiang, H.X. ; Rairigh, R. ; Kelly, I. ; Hebard, A.F. ; Zavada, J.M. ; Wilson, R.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.384-389,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
4.

Conference Proceedings
Conference Proceedings
4. Epitaxial growth and time-resolved photoluminescence studies of AIN epilayers
Nam, K.B. ; Li, J. ; Nakarmi, M.L. ; Lin, J.Y. ; Jiang, H.X.
Pub. info.: Ultrafast Phenomena in Semiconductors VII.  pp.202-208,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4992
5.

Conference Proceedings
Conference Proceedings
5. Time-resolved photoluminescence studies of Si- and Mg-doped AlN epilayers
Nam, K.B. ; Nakarmi, M.L. ; Li, J. ; Lin, J.Y. ; Jiang, H.X.
Pub. info.: Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII.  pp.188-195,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5352