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13 results

Conference Proceedings

1. Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method

N. Hoshino ; I. Kamata ; Y. Tokuda ; E. Makino ; N. Sugiyama

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.29-32, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

2. Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method

I. Kamata ; N. Hoshino ; Y. Tokuda ; E. Makino ; N. Sugiyama

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.61-64, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

3. Developing Technologies of SiC Gas Source Growth Method

J. Kojima ; Y. Tokuda ; E. Makino ; N. Sugiyama ; N. Hoshino

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.23-28, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

4. Uniaxially Strained Si/SiGe Wire-Channel Transistors

T. Tezuka ; T. Irisawa ; E. Toyoda ; N. Sugiyama ; S. Takagi

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment. pp.263-274, 2008. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	13(1)

Conference Proceedings

5. Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region

N. Sugiyama ; Y. Takeuchi ; M. Kataoka ; A. Schöner ; R.K. Malhan

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.171-174, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

6. Correlation between Surface Morphological Defects and Crystallographic Defects in SiC

T. Hatakeyama ; K. Ichinoseki ; H. Yamaguchi ; N. Sugiyama ; H. Matsuhata

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.359-362, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

7. In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC

A. Schöner ; N. Sugiyama ; Y. Takeuchi ; R.K. Malhan

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.175-178, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

8. Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET

R.K. Malhan ; S.J. Rashid ; M. Kataoka ; Y. Takeuchi ; N. Sugiyama

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.1067-1070, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

9. Ge Condensation Technologies for Advanced MOSFETs on SGOI and GOI Substrates

N. Sugiyama ; T. Tezuka ; T. Irisawa ; K. Usuda ; Y. Moriyama

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.1015-1022, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

10.

Conference Proceedings

10. High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method

J. Kojima ; E. Makino ; Y. Tokuda ; N. Sugiyama ; N. Hoshino

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.104-107, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

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Author: N. Sugiyama