1.

Conference Proceedings
Conference Proceedings
1. High Quality 3C-SiC Substrate for MOSFET Fabrication
H. Nagasawa ; T. Kawahara ; K. Yagi ; N. Hatta ; H. Uchida
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.91-98,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
2.

Conference Proceedings
Conference Proceedings
2. Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)
N. Hatta ; T. Kawahara ; K. Yagi ; H. Nagasawa ; S.A. Reshanov
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.173-176,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Propagation of Stacking Faults in 3C-SiC
H. Nagasawa ; T. Kawahara ; K. Yagi ; N. Hatta
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.282-285,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
4.

Conference Proceedings
Conference Proceedings
4. Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
H. Nagasawa ; K. Yagi ; T. Kawahara ; N. Hatta ; M. Abe
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.89-94,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
5.

Conference Proceedings
Conference Proceedings
5. Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
T. Kawahara ; N. Hatta ; K. Yagi ; H. Uchida ; M. Kobayashi
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.339-342,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648