1.

Conference Proceedings
Conference Proceedings
1. Materials Interaction at the Nanoscale in High-k Metal Gate Stacks: The Role of Oxygen
S. Guha ; E. Preisler ; N. Bojarczuk ; M. Copel
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.363-370,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
2.

Conference Proceedings
Conference Proceedings
2. Charge Defects, Vt Shifts, and the Solution to the High-K Metal Gate n-MOSFET Problem
S. Guha ; V. Narayanan ; V. Paruchuri ; B. Linder ; M. Copel ; N. Bojarczuk ; Y. Kim ; M. Chudzik ; Y. Wang ; P. Ronsheim
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.247-252,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)
3.

Conference Proceedings
Conference Proceedings
3. Recent Advances in Search for Suitable High-k/Metal Gate Solutions to Replace SiON/Poly-Silicon Gate Stacks in CMOS Devices for 45nm and Beyond Technologies
B. Linder ; V. Paruchuri ; V. Narayanan ; E. Cartier ; N. Bojarczuk ; S. Guha ; S. Brown ; Y. Wang
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.287-294,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)