1.

Conference Proceedings
Conference Proceedings
1. Bulk Growth of Silicon Carbide Crystals: Analysis of Growth Rate and Crystal Quality
Hofmann, D. ; Eckstein, R. ; Kadinski, L. ; Kolbl, M. ; Muller, M. ; Muller, St. G. ; Schmitt, E. ; Weber, A. ; Winnacker, A.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.301-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
2.

Conference Proceedings
Conference Proceedings
2. Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals
Eckstein, R. ; Hofmann, D. ; Makarov, Y. ; Muller, St. G. ; Pensl, G. ; Schmitt, E. ; Winnacker, A.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.215-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
3.

Conference Proceedings
Conference Proceedings
3. Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
Hobgood, D. ; Brady, M. ; Brixius, W. ; Fechko, G. ; Glass, R. ; Henshall, D. ; Jenny, J. ; Leonard, R. ; Malta, D. ; Muller, St. G. ; Tsvetkov, V. ; Carter, C. H. Jr.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.3-8,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
4.

Conference Proceedings
Conference Proceedings
4. Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth
Muller, St. G. ; Fricke, J. ; Hofmann, D. ; Horn, R. ; Nilsson, O. ; Rexer, B.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.43-46,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Experimental and theoretical analysis of the hall-mobility in n-type bulk 6H- and 4H-SiC
Muller, St. G. ; Hofmann, D. ; Winnacker, A.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.275-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
6.

Conference Proceedings
Conference Proceedings
6. The As-Grown Microtopologies of Modified-Lely SiC(0001) Terraced Vicinal Surfaces
Marek, T. ; Heindl, J. ; Strunk, H. P. ; Eckstein, R. ; Muller, St. G. ; Hofmann, D.
Pub. info.: Structure and evolution of surfaces : symposium held December 2-5, 1996, Boston, Massachusette, U.S.A..  pp.145-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 440