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17 results

Conference Proceedings

1. Design requirements for high-sensitivity UV solar blind imaging detectors based on AlGaN/GaN photodetector arrays: a review

Litton,C.W. ; Schreiber,P.J. ; Smith,G.A. ; Dang,T. ; Morkoc,H.

Pub. info.:	Materials for infrared detectors : 30 July-1 August 2001, San Diego, USA. pp.218-232, 2001. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4454

Conference Proceedings

2. Megahertz bandwidth AlxGa1-xN/GaN-based p-i-n detectors

Smith,G. ; Estes,M.J. ; Dang,T. ; Salvador,A.A. ; Fan,Z. ; Xu,G. ; Botchkarev,A. ; Morkoc,H. ; Wolf,P.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.198-205, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

Conference Proceedings

3. Electron-phonon interactions in AlxGa1-xAs:nonmonotonic dependence on the alloy composition

Tsen,K.T. ; Ferry,D.K. ; Salvador,A. ; Morkoc,H.

Pub. info.:	Ultrafast phenomena in semiconductors III : 27-29 January, 1999, San Jose, California. pp.257-265, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3624

Conference Proceedings

4. Piezoelectric effects on the dynamics of optical transitions in GaN/AlxGa1-xN multiple quantum wells

Kim,H.S. ; Lin,J.Y. ; Jiang,H.X. ; Chow,W.W. ; Botchkarev,A. ; Morkoc,H.

Pub. info.:	Ultrafast phenomena in semiconductors III : 27-29 January, 1999, San Jose, California. pp.198-206, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3624

Conference Proceedings

5. Decay of the longitudinal optical phonons in wurtzite GaN

Tsen,K.T. ; Ferry,D.K. ; Salvador,A. ; Morkoc,H.

Pub. info.:	Ultrafast phenomena in semiconductors III : 27-29 January, 1999, San Jose, California. pp.250-256, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3624

Conference Proceedings

6. Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and AlxGa1-xN

Tsen,K.T. ; Ferry,D.K. ; Goodnick,S.M. ; Salvador,A. ; Morkoc,H.

Pub. info.:	Ultrafast phenomena in semiconductors IV : 27-28 January 2000, San Jose, California. pp.270-278, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3940

Conference Proceedings

7. Non-Linear Exciton Spectroscopy of GaN/AIGaN Quantum Wells

Cingolani,R. ; Coli,G. ; Rinaldi,R. ; Calcagnile,L. ; Tang,H. ; Botchkarev,A.E. ; Kim,W. ; Salvador,A. ; Morkoc,H.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1303-1306, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. Defects in and Applications of III-V Nitride Semiconductors

Morkoc,H.

Pub. info.:	Proceedings of the 13th International Conference on Defects in Insulating Materials, ICDIM 96, July 15-19, 1996, Wake Forest University, Winston-Salem, NC 27109, USA. pp.119-144, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	239-241

Conference Proceedings

9. The Atomic Structure of Prismatic Planar Defects in GaN/AIN Grown over Silicon Carbide and Sapphire Substrates

Nouet,G. ; Vermaut,P. ; Potin,V. ; Ruterana,P. ; Salvador,A. ; Morkoc,H.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1247-1250, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001)by Reactive Molecular Beam Epitaxy

Hamdani,F. ; Yeadon,M. ; Smith,D.J. ; Tang,H. ; Kim,W. ; Salvador,A. ; Botchkarev,A.E. ; Gibson,J.M. ; Morkoc,H.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1201-1204, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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