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14 results

Conference Proceedings

1. Thickness Dependence of Electronic Properties of GaN Epilayers

Gotz, W. ; Walker, J. ; Romano, L. T. ; Johnson, N. M. ; Molnar, R. J.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.525-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

2. HYDROGENATION OF GALLIUM NITRIDE

Brandt, M. S. ; Johnson, N. M. ; Molnar, R. J. ; Singh, R. ; Moustakas, T. D.

Pub. info.:	Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.. pp.341-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	325

Conference Proceedings

3. Optoelectronic and Structural Properties of High-Quality GaN Grown by Hydride Vapor Phase Epitaxy

Molnar, R. J. ; Aggarwal, R. ; Liau, Z-L. ; Brown, E. R. ; Melngailis, I. ; Gotz, W. ; Romano, L. T. ; Johnson, N. M.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.189-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

4. Structural Characterization of Thick GaN Films Grown by Hydride Vapor Phase Epitaxy

Romano, L. T. ; Molnar, R. J. ; Krusor, B. S. ; Anderson, G. A. ; Bour, D. P. ; Maki, P.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.245-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

5. Gallium Nitride Thick Films Grown by Hydride Vapor Phase Epitaxy

Molnar, R. J. ; Maki, P. ; Aggarwal, R. ; Liau, Z. L. ; Brown, E. R. ; Melngailis, I. ; Gotz, W. ; Romano, L. T. ; Johnson, N. M.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.221-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

6. Electron Irradiation-Induced Trap in n-Type GaN

Fang, Z-Q. ; Hemsky, J. W. ; Look, D. C. ; Mack, M. P. ; Molnar, R. J. ; Via, G. D.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.881-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

7. Highly Selective Photoenhanced Wet Etching of GaN for Defect Investigation and Device Fabrication

Visconti, P. ; Reshchikov, M.A. ; Jones, K.M. ; Yun, F. ; Wang, D. F. ; Cingolani, R. ; Morkoc, H. ; Litton, C. W. ; Molnar, R. J.

Pub. info.:	GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	639

Conference Proceedings

8. Plasma-Induced Effects On The Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001)

Florescu, D. I. ; Pollak, Fred H. ; Lanford, William B. ; Khan, Farid ; Adesida, I. ; Molnar, R. J.

Pub. info.:	GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	639

Conference Proceedings

9. Low Frequency Noise in n-GaN with High Electron Mobility

Rumyantsev, S. L. ; Look, D. C. ; Levinshtein, M. E. ; Asif Khan, M. ; Simin, G. ; Adivarahan, V. ; Molnar, R. J. ; Shur, M. S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1603-1608, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

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Conference Proceedings

10. Direct Observation of Bulk and Interface States in GaN on Sapphire Grown by Hydride Vapor Phase Epitaxy

Goss, S. H. ; Young, A. P. ; Brillson, L. J. ; Loo, D. C. ; Molnar, R. J.

Pub. info.:	GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	639

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