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20 results

Conference Proceedings

1. Formation of Alkali- and Si-Endohedral Fullerenes Based on Plasma Technology.

Hatakeyama, R. ; Hirata, T. ; Sato, N. ; Mieno, T. ; Sato, N.Y. ; Oku, T. ; Mase, H. ; Niwano, M. ; Miyamoto, N.

Pub. info.:	Fullerenes : fullerenes for the new millennium : proceedings of the International Symposium on Fullerenes, Nanotubes, and Carbon Nanoclusters. pp.341-348, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-11

Conference Proceedings

2. Preparation and Noise Properties of Perpendicular/Longitudinal Composite Media prepared by Electroless-Depositioned Method

Oncue, T. ; Miyamoto, N. ; Hokkyo, J. ; Homma, T. ; Osaka, T.

Pub. info.:	Proceedings of the Fifth International Sympposium on Magnetic Materials, Processes, and Devices : applications to storage and microelectromechanical systems (MEMS). pp.231-241, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-20

Conference Proceedings

3. CHARACTERISTICS AND RELIABILITY OF AMORPHOUS SILICON PHOTOCONDUCTOR DRUMS FOR PPC OR LBP

Itoh, H. ; Takemura, H. ; Sasaki, T. ; Miyamoto, N. ; Higuchi, H. ; Ishibitsu, K. ; Kawamura, T.

Pub. info.:	Amorphous silicon technology : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.. pp.417-422, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	118

Conference Proceedings

4. Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

Negoro, Y. ; Miyamoto, N. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.783-786, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Surface Reaction Kintetics in Synchrotron Radiation Assisted Chemical Vapor Deposition of Si with SiH2Cl2

Sakamoto, H. ; Takakuwa, Y. ; Enta, Y. ; Hori, T. ; Miyamoto, N. ; Kato, H.

Pub. info.:	Proceedings of the Twelfth International Symposium on Chemical Vapor Deposition. pp.27-33, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-2

Conference Proceedings

6. Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC

Schoener, A. ; Miyamoto, N. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.451-454, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

7. High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation

Negoro, Y. ; Miyamoto, N. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1273-1276, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Formation of Deep pn Junctions by MeV Al- and B-Ion Implantations into 4H-SiC and Reverse Characteristics

Miyamoto, N. ; Saitoh, A. ; Kimoto, T. ; Matsunami, H. ; Hishida, Y. ; Watanabe, M.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1347-1350, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

9. Recent Progress in SiC Epitaxial Growth and Device Processing Technology

Kimoto, T. ; Yano, H. ; Tamura, S. ; Miyamoto, N. ; Fujihira, K. ; Negoro, Y. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.543-548, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

10.

Conference Proceedings

10. High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation

Negoro, Y. ; Miyamoto, N. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1273-1276, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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