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Conference Proceedings

1. THE EFFECT OF HYDROGEN TREATMENT ON ELECTRICAL PROPERTIES OF A1GaAsSb

Polyakov, A. Y. ; Stam, M. ; Milnes, A. G. ; Wilson, R. G. ; Bochkarev, A. E. ; Raichoudhyry, P. ; Hillard, R. J. ; Pearton, S. J,.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.425-430, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

2. HIGH RESISTIVITY GaSb AND GaAs PRODUCED BY MBE GROWTH AT ELEVATED TEMPERATURES

Polyakov, A. Y. ; Milnes, A. G. ; Stam, M, ; Wilson, R. G. ; Fang, Z. Q. ; Raichoudhury, P. ; Hillard, R. J.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.157-162, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

3. CHARACTERIZATION OF MBE GROWN GaAs WITH ISOELECTRONIC DOPING OF INDIUM OR ANTIMONY

Li, A. Z. ; Kim, H. K. ; Jeong, J. ; Zhao, J. ; Schlesinger, T. E. ; Milnes, A. G.

Pub. info.:	Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.. pp.497-502, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	102

Conference Proceedings

4. PINNING ACTION OF A THIN Ga INTERFACIAL LAYER IN AN Sb/Ga/GaAs SCHOTTKY BARRIER STRUCTURE GROWN BY MBE

Zhang, X. J. ; Cheng, H. ; Milnes, A. G.

Pub. info.:	Layered structures, epitaxy, and interfaces : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A.. pp.387-394, 1985. Pittsburgh. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	37