1.

Conference Proceedings
Conference Proceedings
1. Double Gate 180V-128mA/mm SiC-MESFET for Power Switch Applications
Tournier, D. ; Vellvehi, M. ; Godignon, P. ; Jorda, X. ; Millan, J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1243-1246,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. 4,5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules
Tournier, D. ; Waind, P. ; Godignon, P. ; Coulbeck, L. ; Millan, J. ; Bassett, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1163-1166,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
Perez-Tomas, A. ; Vellvehi, M. ; Mestres, N. ; Millan, J. ; Vennegues, P. ; Stoemenos, J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1059-1062,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors
Brezeanu, G. ; Badila, M. ; Godignon, P. ; Millan, J. ; Udrea, F. ; Mihaila, A. ; Amaratunga, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1301-1304,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. 4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric
Perez-Tomas, A. ; Godignon, P. ; Mestres, N. ; Tournier, D. ; Montserrat, J. ; Millan, J.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.211-216,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
6.

Conference Proceedings
Conference Proceedings
6. Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers
Jorda, X. ; Tournier, D. ; Rebollo, J. ; Millan, J. ; Godignon, P.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.929-932,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
7.

Conference Proceedings
Conference Proceedings
7. 6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects
Badila, M. ; Brezeanu, G. ; Chante, J. P. ; Locatelli, M. -L. ; Millan, J. ; Godignon, P. ; Lebedev, A. ; Lungu, P. ; Banu, V.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1355-1358,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
8.

Conference Proceedings
Conference Proceedings
8. 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O
Perez-Tomas, A. ; Tournier, D. ; Godignon, P. ; Mestres, N. ; Millan, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.673-676,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. 4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric
Perez-Tomas, A. ; Godignon, P. ; Mestres, N. ; Montserrat, J. ; Millan, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.713-716,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
10.

Conference Proceedings
Conference Proceedings
10. High-voltage high-current DMOS transistor compatible with high-temperature thin-film SOI CMOS applications
Godignon, P. ; Vellvehi, M. ; Flores, D. ; Millan, J. ; Hagelsieb, L. ; Moreno, Flandre D.
Pub. info.: Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment.  pp.279-284,  2005.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 185