1.

Conference Proceedings
Conference Proceedings
1. The Role of Residual Source/Drain Implant Damage Traps on SiC MESFET Drain I-V Characteristics
Adjaye, J. ; Mazzola, M.S. ; Los, A.V.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1247-1250,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Fast Switching (41 MHz), 2.5 mΩ・cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications
Cheng, L. ; Casady, J.R.B. ; Mazzola, M.S. ; Bondarenko, V. ; Kelley, R.L. ; Sankin, I. ; Merrett, J.N. ; Casadv, J.B.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1183-1186,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Inherently Safe Resonant Reset Fotward Converter Using a Bias-Enhanced SiC JFET
Kelley, R.L. ; Brignac, T. ; Mazzola, M.S. ; Casady, J.B.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1211-1214,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Highly Uniform SiC Epitaxy for MESFET Fabrication
Zhang, J. ; Mazzola, J. ; Hoff, C. ; Rivas, C. ; Romano, E. ; Casady, J.R.B. ; Mazzola, M.S. ; Casady, J.B. ; Matocha, K.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.195-198,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Process-Dependent Charges and Traps in Dielectrics on SiC
Krishnan, B. ; Das, H. ; Koshka, Y. ; Sankin, I. ; Martin, P.A. ; Mazzola, M.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.995-998,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Photoluminescence Investigation of Hydrogen Interaction with Defects in SiC
Koshka, Y. ; Mazzola, M.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.609-612,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data Analysis
Los, A.V. ; Mazzola, M.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.545-548,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
Los, A.V. ; Mazzola, M.S. ; Kajfez, D. ; McDaniel, B.T. ; Smith, C.E. ; Kretchmer, J. ; Rowland, L.B. ; Casady, J.B.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1193-1196,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
9.

Conference Proceedings
Conference Proceedings
9. The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC
Koshka, Y. ; Mazzola, M.S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.497-500,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
Mazzola, M.S. ; Casady, J.B. ; Merrett, N. ; Sankin, I. ; Draper, W. ; Seale, D. ; Bondarenko, V. ; Koshka, Y. ; Gafford, J. ; Kelley, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1153-1156,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460