1.

Conference Proceedings
Conference Proceedings
1. High Performance Silicon Wafer with Wide Grown-in Void Free Zone and High Density Internal Gettering Site Achieved via Rapid Crystal Growth with Nitrogen Doping and High Temperature Hydrogen and/or Argon Annealing
Tamatsuka, M. ; Kobayashi, N. ; Tobe, S. ; Masui, T.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.456-467,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
2.

Conference Proceedings
Conference Proceedings
2. Influence of Rapid Thermal Annealing on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon
Takeno, H. ; Aihara, K. ; Hayamizu, Y. ; Masui, T. ; Suezawa, M.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.150-161,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1