1.

Conference Proceedings
Conference Proceedings
1. INTRODUCTORY REMARKS - DIELECTRICS, INTERFACES AND EPITAXY
Massoud, H.Z. ; Ishitani, A.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.727-729,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
2.

Conference Proceedings
Conference Proceedings
2. Ellipsometry-Based Process Monitoring and Control for Ultrathin Gate Dielectrics
Massoud, H.Z.
Pub. info.: Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.208-216,  1997.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-10
3.

Conference Proceedings
Conference Proceedings
3. Percolation Model For The Extreme-Value Statistics Of Dielectric Breakdown In Rapid-Thermal Oxides
Massoud, H.Z. ; Deaton, R.
Pub. info.: Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.583-592,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-16
4.

Conference Proceedings
Conference Proceedings
4. Wear-Out and Stress-Induced Leakage Current of Ultrathin Gate Oxides
Thees, H.-J. ; Osburn, C.M. ; Shiely, J.P. ; Massoud, H.Z.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.677-686,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
5.

Conference Proceedings
Conference Proceedings
5. Electrical Performance of Stacked High-ti Gate Dielectrics: Remote Plasma CVD Ta2O5 and (Ta2O5)x(SiO2)1-x Alloys with Ultrathin Plasma Processed Si02 Interface Layers
Niimi, H. ; Johnson, R.S. ; Lucovsky, C. ; Massoud, H.Z.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.487-494,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2