1.

Conference Proceedings
Conference Proceedings
1. Multi-fin double-gate MOSFET fabricated by using (110)-oriented SOI wafers and orientation-dependent etching
Liu, V. ; Ishii, K. ; Tsutsumi, T. ; Masahara, M. ; Takashima, H. ; Suzuki, E.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.255-260,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
2.

Conference Proceedings
Conference Proceedings
2. Demonstration and device design consideration of Vth-controllable independent double-gate MOSFET (4-Terminal XMOS) Inveted
Masahara, M. ; Liu, Y.-X. ; Sakamoto, K. ; Endo, K. ; Matsukawa, T. ; Ishii, K. ; Sekigawa, T. ; Koike, H. ; Suzuki, E.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.261-272,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
3.

Conference Proceedings
Conference Proceedings
3. Double-Gate FinFET Innovation: From 3-Terminal to Flexible Threshold Voltage 4-T erminal
Liu, Y. ; Masahara, M. ; Ishii, K. ; Suzuki, E.
Pub. info.: Dielectrics for nanosystems: materials science, processing, reliability, and manufacturing : proceedings of the First international symposium.  pp.74-85,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-04
4.

Conference Proceedings
Conference Proceedings
4. Multi-fin Double Gate MOSFET Fabricated by Using (110)-Oriented SOT Wafers and Orientation dependent Etching
Liu, Y.X. ; Ishii, K. ; Tsutsumi, T. ; Masahara, M. ; Takashima, H. ; Suzuki, E.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.566-571,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-6