1.

Conference Proceedings
Conference Proceedings
1. Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C
Wahl,U. ; Correia,J.G. ; Langouche,G. ; Marques,J.G. ; Vantomme,A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1503-1508,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
2.

Conference Proceedings
Conference Proceedings
2. Lattice Location of Hf in Near-Stoichiometric LiNbO3:RBS/Channeling and PAC Studies
Marques,J.G. ; Kling,A. ; Rebouta,L. ; Silva,M.F.Da ; Melo,A.A. ; Soares,J.C. ; Serrano,M.D. ; Diguez,E. ; Agullo-Lopez,F.
Pub. info.: Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996.  pp.395-398,  1997.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 248-249