1.

Conference Proceedings
Conference Proceedings
1. ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF Mg+ AND C+ IMPLANTED ACCEPTORS IN InP
Beye, A.C. ; Yamada, A. ; Shimizu, A. ; Shibata, H. ; Tanoue, H. ; Mayer, K.M. ; Sugiyama, H. ; Kamijoh, K. ; Oda, T. ; Arriga, O. ; Akiyama, I. ; Kutsuwada, N. ; Matsumori, T. ; Uekusa, S. ; Makita, Y.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.139-144,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
2.

Conference Proceedings
Conference Proceedings
2. ELECTRICAL PROPERTIES OF HEAVILY Be-DOED GaAs GROWN BY MOLECULAR BEAM EPITAXY
Shibata, H. ; Makita, Y. ; Yamada, A. ; Ohnishi, N. ; Mori, M. ; Nakayama, Y. ; Beye, A.C. ; Mayer, K.M. ; Takahashi, T. ; Sugiyama, Y. ; Tacano, M. ; Ishituka, K. ; Matsumori, T.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.121-126,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
3.

Conference Proceedings
Conference Proceedings
3. FORMATION OF THREE RED-SHIFT EMISSIONS IN HEAVILY GERMANIUM-DOPED P-TYPE GaAs GROWN BY MBE
Makita, Y. ; Yamada, A. ; Shibata, H. ; Asakura, H. ; Ohnishi, N. ; Beye, A.C. ; Mayer, K.M. ; Kutsuwada, N.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.115-120,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
4.

Conference Proceedings
Conference Proceedings
4. Photoluminescence Spectra from Acceptor-Doped GaAs and InP having Extremely Low Background Concentration of Donor Impurities: Formation of Novel Emissions
Yoshinaga, H. ; Makita, Y. ; Iida, T. ; Yamada, A. ; Winter, S. ; Kimura, S. ; Niki, S. ; Obara, A. ; Oda, O. ; Kainosho, K. ; Uekusa, S. ; Matsumori, T.
Pub. info.: Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII).  pp.75-85,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-10
5.

Conference Proceedings
Conference Proceedings
5. Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion-Beam and Molecular-Beam-Epitaxy Method
Shibata, H. ; Kimura, S. ; Fons, P. ; Yamada, A. ; Makita, Y. ; Obara, A. ; Kobayashi, N. ; Takahashi, H. ; Katsumata, H. ; Tanabe, J. ; Uekusa, S.
Pub. info.: Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.393-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 438
6.

Conference Proceedings
Conference Proceedings
6. Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and InGaAs
Makita, Y. ; Iida, T. ; Shima, T. ; Kimura, S. ; Obara, A. ; Harada, K. ; Tu, C. W. ; Uekusa, S. ; Matsumori, T. ; Kudo, K. ; Tanaka, K.
Pub. info.: Film synthesis and growth using energetic beams : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.241-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 388
7.

Conference Proceedings
Conference Proceedings
7. Ion-Beam-Induced Epitaxy and Solid Phase Epitaxy of SiGeC on Si Formed by Ge and C Ion Implantation and Their Structural and Optical Properties
Kobayashi, N. ; Katsumata, H. ; Makita, Y. ; Hasegawa, M. ; Hayashi, N. ; Shibata, H. ; Uekusa, S. ; Hishita, S.
Pub. info.: Film synthesis and growth using energetic beams : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.189-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 388
8.

Conference Proceedings
Conference Proceedings
8. Carbon Doping Into GaAs Using Low-Energy Hydrocarbon Ions
Sanpei, H. ; Shima, T. ; Makita, Y. ; Kimura, S. ; Fukuzawa, Y. ; Nakamura, Y. ; Sandhu, A.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.61-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
9.

Conference Proceedings
Conference Proceedings
9. Highly Efficient Nitrogen Doping Into GaAs Using Low-Energy Nitrogen Molecular Ions
Shima, T. ; Makita, Y. ; Kimura, S. ; Sanpei, H. ; Fukuzawa, Y.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.73-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
10.

Conference Proceedings
Conference Proceedings
10. Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion-Beam and Molecular-Beam-Epitaxy Method
Shibata, H. ; Kimura, S. ; Fons, P. ; Yamada, A. ; Makita, Y. ; Obara, A. ; Kobayashi, N. ; Takahashi, H. ; Katsumata, H. ; Tanabe, J. ; Uekusa, S.
Pub. info.: Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.233-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 439