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Conference Proceedings

1. PASSIVATING COMPLEXES IN Cd DOPED GaAs AND InP: MICROSCOPIC PROPERTIES AND ELCTRICAL EFFECTS

Moriya, N. ; Deicher, M. ; Kalish, R. ; Keller, R. ; Magerle, R. ; Pfeiffer, W. ; Pross, P. ; Skudlik, H. ; Wichert, Th. ; Wolf, H. ; Collaboration, Isolde

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.431-436, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

2. First Microscopic Observation of Cadmium-Hydrogen Pairs in GaN

Burchard, A. ; Deicher, M. ; Forkel-Wirth, D. ; Haller, E. E. ; Magerle, R. ; Prospero, A. ; Stotzler, R. ; The Isolde-Collaboration

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.961-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

3. Microscopic Study of the Hydrogen Diffusion in III-V Semiconductors

Burchard, A. ; Deicher, M. ; Forkel-Wirth, D. ; Knopf, M. ; Magerle, R. ; Stotzler, A. ; Fedoseyev, V. N. ; Mishin, V. I. ; The Isolde-Collaboration

Pub. info.:	Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.171-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	513

Conference Proceedings

4. Radioactive Isotopes in Photoluminescence Experiments: Identification of Defect Levels

Magerle, R.

Pub. info.:	Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.3-, 1997. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	442

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