1.

Conference Proceedings
Conference Proceedings
1. *Current status of SiC power switching devices: Diodes and GTOs
Seshadri, S. ; Agarwal, A. K. ; Hall, W. B. ; Mani, S. S. ; MacMillan, M. F. ; Rodrigues, R. ; Hanson, T. ; Khatri, S. ; Sanger, P. A.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.23-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
2.

Conference Proceedings
Conference Proceedings
2. Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers
Nordby, H. D. Jr. ; O'Loughlin, M. J. ; MacMillan, M. F. ; Burk, A. A. Jr. ; Oliver, J. D. Jr.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.173-176,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
3.

Conference Proceedings
Conference Proceedings
3. Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers
Nigam, S. ; Kim, J. ; Luo, B. ; Ren, F. ; Chung, G. ; MacMillan, M. F. ; Williams, J. R. ; Pearton, S. J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.144-153,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14