1.

Conference Proceedings
Conference Proceedings
1. Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
S.U. Omar ; H.Z. Song ; T.S. Sudarshan ; M.V.S. Chandrashekhar
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.399-402,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
2.

Conference Proceedings
Conference Proceedings
2. Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases
T. Rana ; H.Z. Song ; M.V.S. Chandrashekhar ; T.S. Sudarshan
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.117-120,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth
T. Rana ; H.Z. Song ; M.V.S. Chandrashekhar ; T.S. Sudarshan
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.153-156,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors
H.Z. Song ; S.U. Omar ; T. Rana ; M.V.S. Chandrashekhar ; T.S. Sudarshan
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.121-124,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces
B.K. Daas ; K.M. Daniels ; S. Shetu ; T.S. Sudarshan ; M.V.S. Chandrashekhar
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.633-636,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor
H.Z. Song ; M.V.S. Chandrashekhar ; T.S. Sudarshan
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.129-132,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
7.

Conference Proceedings
Conference Proceedings
7. Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace
A. Balachandran ; H.Z. Song ; T.S. Sudarshan ; S.S. Shetu ; M.V.S. Chandrashekhar
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.137-140,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823