1.

Conference Proceedings
Conference Proceedings
1. Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles
T. Ohnuma ; A. Miyashita ; M. Iwasawa ; M. Yoshikawa ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.615-620,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Generation of Amorphous SiO2/SiC Interface Structure by the First-Principles Molecular Dynamics Simulation
A. Miyashita ; T. Ohnuma ; M. Iwasawa ; H. Tsuchida ; M. Yoshikawa
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.521-524,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy
M. Yoshikawa ; M. Murakami ; T. Fujita ; K. Inoue ; K. Matsuda
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1305-1308,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
R. Sugie ; M. Yoshikawa ; S. Harada ; Y. Namikawa
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.353-356,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
5.

Conference Proceedings
Conference Proceedings
5. Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation
T. Mitani ; R. Hattori ; M. Yoshikawa
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.481-484,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
6.

Conference Proceedings
Conference Proceedings
6. Characterization of Inhomogeneity in SiO2 Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy
M. Yoshikawa ; H. Seki ; K. Inoue ; T. Kobayashi ; T. Kimoto
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.460-463,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
7.

Conference Proceedings
Conference Proceedings
7. Dynamical Simulation of SiO2/4H-SiC Interface on C-Face Oxidation Process: From First Principles
T. Ohnuma ; A. Miyashita ; M. Iwasawa ; M. Yoshikawa ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.591-596,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
8.

Conference Proceedings
Conference Proceedings
8. Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy
T. Mitani ; R. Hattori ; M. Yoshikawa
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.615-618,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
9.

Conference Proceedings
Conference Proceedings
9. Dynamical Simulations of Dry Oxidation and NO Annealing of SiO2/4H-SiC Interface on C-Face at 1500K: From First Principles
T. Ohnuma ; A. Miyashita ; M. Yoshikawa ; H. Tsuchida
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.483-486,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
10.

Conference Proceedings
Conference Proceedings
10. ERROR EVALUATION OF 5 YEAR SPACE DEBRIS OBSERVATIONS AT THE BISEI SPACEGUARD CENTER
S. Isobe ; A. Asami ; N. Hasimoto ; S. Nakano ; K. Nisiyama ; Y. Oshima ; N. Takahasi ; T. Urata ; M. Yoshikawa ; Y. Taromaru ; C. Hirose ; S. Mori ; M. Horii
Pub. info.: Proceedings of the 4th European Conference on Space Debris, 18-20 April 2005, ESA/ESOC, Darmstadt, Germany.  pp.641-644,  2005.  Noordwijk, The Netherlands.  ESA Publications Division
Title of ser.: ESA SP
Ser. no.: 587