1.

Conference Proceedings
Conference Proceedings
1. Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density
T. Tanaka ; N. Kawabata ; Y. Mitani ; N. Tomita ; M. Tarutani
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.91-94,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
2.

Conference Proceedings
Conference Proceedings
2. Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
Y. Mitani ; N. Tomita ; K. Hamano ; M. Tarutani ; T. Tanaka
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.167-170,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780