1.

Conference Proceedings
Conference Proceedings
1. Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate
K. Momose ; M. Odawara ; Y. Tajima ; H. Koizumi ; D. Muto
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.115-118,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
2.

Conference Proceedings
Conference Proceedings
2. Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers
M. Odawara ; K. Kamei ; Y. Miyasaka ; T. Yamashita ; S. Takahashi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.382-385,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
3.

Conference Proceedings
Conference Proceedings
3. Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy
T. Yamashita ; H. Matsuhata ; Y. Miyasaka ; M. Odawara ; K. Momose
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.585-588,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742