1.

Conference Proceedings
Conference Proceedings
1. First-Principles Investigation of (100)Ge/Ge(Hf)O2 Interfaces
M. Houssa ; G. Pourtois ; F. Bellenger ; M. Caymax ; M. Meuris
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.471-478,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. Origin and Suppression of Junction Leakage in Germanium-On-Silicon Structures
C. Claeys ; S. Sonde ; E. Simoen ; A. Satta ; B. De Jaeger ; G. Nicolas ; M. Meuris
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.31-40,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
3.

Conference Proceedings
Conference Proceedings
3. Etch Rates of Ge, GaAs and InGaAs in Acids, Bases and Peroxide Based Mixtures
S. Sioncke ; D.P. Brunco ; M. Meuris ; O. Uwamahoro ; J. Van Steenbergen
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.451-460,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
4.

Conference Proceedings
Conference Proceedings
4. METAL DEPOSITION ON Ge SURFACES
S. Sioncke ; B. Onsia ; K. Struys ; J. Rip ; R. Vos ; M. Meuris ; P. Mertens ; A. Theuwis
Pub. info.: Cleaning Technology in Semiconductor Device Manufacturing IX.  pp.220-227,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(3)
5.

Conference Proceedings
Conference Proceedings
5. Characterization of Atomic-Beam Deposited GeO₁₋xNx/HfO₂ Stacks on Ge
M. Houssa ; T. Conard ; J. Van Steenbergen ; G. Mavrou ; Y. Panayiotatos ; T. Dimaulas ; M. Meuris ; M. Caymax ; M. Heyns ; G. Nicholas
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.9-16,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
6.

Conference Proceedings
Conference Proceedings
6. A Step Towards a Better Understanding of Silicon Passivated (100)Ge p- Channel Devices
G. Pourtois ; M Houssa ; B. De Jaeger ; F. Leys ; B. Kaczer ; K. Martens ; M. Caymax ; M. Meuris ; G. Groeseneken ; M. Heyns
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.53-64,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)