1.

Conference Proceedings
Conference Proceedings
1. Wide Controllability of Flatband Voltage in La₂O₃ Gate Stack Structures-Remarkable Advantages of La₂O₃ over HfO₂
K. Ohmori ; P. Ahmet ; K. Shiraishi ; K. Yamabe ; H. Watanabe ; Y. Akasaka ; N. Umezawa ; K. Nakajima ; M. Yoshitake ; T. Nakayama ; K. Chang ; K. Kakushima ; Y. Nara ; M. L. Green ; H. Iwai ; K. Yamada ; T. Cchikyow
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.351-362,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
2.

Conference Proceedings
Conference Proceedings
2. A Combinatorial Study of Metal Gate/HfO₂ MOSCAPS
M. L. Green ; K. Chang ; I. Takeuchi ; T. Chikyow
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.341-350,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)