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10 results

Conference Proceedings

1. 4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology

M. Alexandru ; V. Banu ; P. Godignon ; M. Vellvehi ; J. Millán

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.1048-1051, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue

M. Florentin ; M. Alexandru ; A. Constant ; P. Michel ; J. Montserrat

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.667-672, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

3. Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs

M. Alexandru ; V. Banu ; M. Vellvehi ; P. Godignon ; J. Millan

Pub. info.:	HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France. pp.104-108, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	711

Conference Proceedings

4. Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications

V. Banu ; P. Godignon ; X. Jordá ; M. Alexandru ; J. Millán

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.754-757, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

5. High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

M. Alexandru ; V. Banu ; M. Florentin ; X. Jordá ; M. Vellvehi

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.1130-1134, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

6. 10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters

M. Florentin ; M. Alexandru ; A. Constant ; B. Schmidt ; P. Godignon

Pub. info.:	HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France. pp.121-126, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	806

Conference Proceedings

7. Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness

M. Cabello ; M. Florentin ; M. Alexandru ; B. Schmidt ; J. Rebollo

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.655-658, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

8. Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

M. Florentin ; M. Alexandru ; A. Constant ; B. Schmidt ; J. Millán

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.525-528, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

9. SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

P. Godignon ; M. Alexandru ; V. Banu

Pub. info.:	Proceedings of 10th European Space Power Conference : 13-17 April 2014 Noordwijkerhout, the Netherlands. 2014. Noordwijk. ESA Communications
Title of ser.:	ESA SP
Ser. no.:	719

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Conference Proceedings

10. Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits

V. Banu ; J. Montserrat ; M. Alexandru ; X. Jordá ; J. Millán

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.891-894, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

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Author: M. Alexandru