1.

Conference Proceedings
Conference Proceedings
1. Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT
A. Salemi ; H. Elahipanah ; B. Buono ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.974-977,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications
L. Lanni ; B.G. Malm ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.966-969,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges
A. Salemi ; H. Elahipanah ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.834-837,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. 4.5-kV 20-mΩ.cm2 Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension
H. Elahipanah ; A. Salemi ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.838-841,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
5.

Conference Proceedings
Conference Proceedings
5. Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices
H. Elahipanah ; A. Salemi ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.978-981,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
6.

Conference Proceedings
Conference Proceedings
6. Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs
A. Salemi ; H. Elahipanah ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.958-961,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
7.

Conference Proceedings
Conference Proceedings
7. High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension
R. Ghandi ; B. Buono ; M. Domeij ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.706-709,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
8.

Conference Proceedings
Conference Proceedings
8. A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors
K.G.P. Eriksson ; M. Domeij ; H.S. Lee ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1171-1174,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
9.

Conference Proceedings
Conference Proceedings
9. Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE
B. Buono ; H.S. Lee ; M. Domeij ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.841-844,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
10.

Conference Proceedings
Conference Proceedings
10. 1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
H.S. Lee ; M. Domeij ; C.M. Zetterling ; R. Ghandi ; M. Östling
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1151-1154,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603