1.

Conference Proceedings
Conference Proceedings
1. ELECTRICAL ACTIVATION BEHAIOR OF ION IMPLANTED SILICON IN GALLIUM ARSENIDE DURING RAPID THERMAL ANNEALING
Fathimulla, A. ; Loughran, T. ; Hovel, H. J.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.495-500,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
2.

Conference Proceedings
Conference Proceedings
2. REACTIVE ION ETCHING OF INDIUM-BAED III-V MATERIALS USING CH4-H2-Ar MIXTURES
Fathimulla, A. ; Loughran, T. ; Bates, J.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.501-506,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144