1.

Conference Proceedings
Conference Proceedings
1. The Role of Residual Source/Drain Implant Damage Traps on SiC MESFET Drain I-V Characteristics
Adjaye, J. ; Mazzola, M.S. ; Los, A.V.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1247-1250,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data Analysis
Los, A.V. ; Mazzola, M.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.545-548,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
Los, A.V. ; Mazzola, M.S. ; Kajfez, D. ; McDaniel, B.T. ; Smith, C.E. ; Kretchmer, J. ; Rowland, L.B. ; Casady, J.B.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1193-1196,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data Analysis
Los, A.V. ; Mazzola, M.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.545-548,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC
Ding, Y. ; Park, K.B. ; Pelz, J.P. ; Los, A.V. ; Mazzola, M.S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1077-1080,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460