1.

Conference Proceedings
Conference Proceedings
1. Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular-Beam Epitaxy Using NH3
Grandjean, N. ; Leroux, M. ; Massies, J. ; Mesrine, M. ; Lorenzini, P.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.69-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
2.

Conference Proceedings
Conference Proceedings
2. High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates
Knap, W. ; Borovitskaya, E. ; Shur, M. S. ; Gaska, R. ; Brandt, B. ; Maude, D. ; Frayssinet, E. ; Lorenzini, P. ; Grandjean, N. ; Massies, J. ; Yang, J. W. ; Hu, X. ; Simin, G. ; Khan, M. Asif ; Skierbiszewski, C. ; Prystawko, P. ; Grzegory, I. ; Porowski, S. ; Karczewski, G.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
3.

Conference Proceedings
Conference Proceedings
3. Two-Dimensional Electron Gas Scattering Mechanisms in AlGaN/GaN Heterostructures
Borovitskaya, E. ; Knap, W. ; Shur, M. S. ; Gaska, R. ; Frayssinet, E. ; Lorenzini, P. ; Grandjen, N. ; Baumont, B. ; Massies, J. ; Skierbiszewski, C. ; Prystawko, P. ; Leszczynski, M. ; Grzegory, I. ; Porowski, S.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639