1.

Conference Proceedings
Conference Proceedings
1. THE DEEP 0.11eV MANGANESE ACCEPTOR LEVEL IN GaAs
Kleverman, M. ; Janzen, E. ; Linnarsson, M. ; Monemar, B.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.207-210,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
2.

Conference Proceedings
Conference Proceedings
2. THE ELECTRONIC STRUCTURE OF THE "0.15 Ev" Cu ACCEPTOR LEVEL IN GaAs
Janzen, E. ; Linnarsson, M. ; Monemar, B. ; Kleverman, M.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.169-174,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
3.

Conference Proceedings
Conference Proceedings
3. Investigation of Lo-Hi-Lo and Delta-Doped Silicon Carbide Structures
Konstantinov, A. ; Karlsson, S. ; AdÅs, C. ; Harris, C. ; Linnarsson, M.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
4.

Conference Proceedings
Conference Proceedings
4. The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
Uneus, L. ; Nakagomi, S. ; Linnarsson, M. ; Janson, M.S. ; Svensson, B.G. ; Yakimova, R. ; Syvaejaervi, M. ; Henry, A. ; Janzen, E. ; Ekedahl, L.-G. ; Lundstrom, I. ; Spetz, A. L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1419-1422,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
Uneus, L. ; Nakagomi, S. ; Linnarsson, M. ; Janson, M.S. ; Svensson, B.G. ; Yakimova, R. ; Syvajarvi, M. ; Henry, A. ; Janzen, E. ; Ekedahl, L.-G. ; Lundstrom, I. ; Spetz, A.L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1419-1422,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393