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Conference Proceedings

1. Damage Reduction in Channeled Ion Implanted 6H-SiC

Morvan, E. ; Mestres, N. ; Campos, F. J. ; Pascual, J. ; Anders, Hallen ; Linnarsson, M. K. ; Kuznetsov, A. Yu.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.893-896, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

2. Diffusion of Phosphorus in Strained Si/SiGe/Si Heterostructures

Kuznetsov, A. Yu. ; Christensen, J. S. ; Linnarsson, M. K. ; Svensson, B. G. ; Radamson, H. H. ; Grahn, J. ; Landgren, G.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.. pp.271-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	568

Conference Proceedings

3. Characterization of Deep Level Defects in 4H and 6H SiC Via DLTS, SIMS and MeV E-Beam Irradiation

Doyle, J. P. ; Aboelfotoh, M. O. ; Linnarsson, M. K. ; Svensson, B. G. ; Schoner, A. ; Nordell, N. ; Harris, C. ; Lindstrom, J. L. ; Janzen, E. ; Hemmingsson, C.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.519-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

4. Diffusion of Hydrogen in 6H Silicon Carbide

Linnarsson, M. K. ; Doyle, J. P. ; Svensson, B. G.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.625-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

5. Dissociation of Deuterium-Defect Complexes in Ion-Implanted Epitaxial 4H-SiC

Janson, M. ; Linnarsson, M. K. ; Hallen, A. ; Svensson, B. G.

Pub. info.:	Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.439-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	513

Conference Proceedings

6. Metal-Contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC

Linnarsson, M. K. ; Spetz, A. Ll. ; Janson, M. S. ; Ekedahl, L. G. ; Karlsson, S. ; Schoner, A. ; Lundstrom, I. ; Svensson, B. G.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.937-940, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

7. Formation of Passivated Layers in p-Type SiC by Low Energy Ion Implantation of Hydrogen

Achtziger, N. ; Hulsen, C. ; Janson, M. S. ; Linnarsson, M. K. ; Svensson, B. G. ; Witthuhn, W.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.933-936, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

8. High Growth Rate Epitaxy of Thick 4H-SiC Layers

Syvajarvi, M. ; Yakimova, R. ; Jacobsson, H. ; Linnarsson, M. K. ; Henry, A. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.165-168, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

9. Channeled Implants in 6H Silicon Carbide

Janson, M. S. ; Hallen, A. ; Godignon, P. ; Kuznetsov, A. Yu. ; Linnarsson, M. K. ; Morvan, E. ; Svensson, B. G.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.889-892, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

10.

Conference Proceedings

10. Photoluminescence Study of CVD Layers Highly Doped with Nitrogen

Forsberg, U. ; Henry, A. ; Linnarsson, M. K. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.619-622, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

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