1.

Conference Proceedings
Conference Proceedings
1. ELECTRONIC STRUCTURE OF VACANCY-PHOSPHORUS IMPURITY COMPLEXES IN SILICON
Xu, Hongqi ; Lindefelt, U.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.287-290,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
2.

Conference Proceedings
Conference Proceedings
2. Theoretical Calculation of Stacking Fault Energies in Silicon Carbide
Iwata, H. ; Lindefelt, U. ; OEberg, S. ; Briddon, P.R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.439-442,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. A Study of Band to Band Tunneling with Application to High-Field Transport in Hexagonal SiC Polytypes
Martinez, A. ; Nilsson, H.-E. ; Lindefelt, U.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.487-490,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
4.

Conference Proceedings
Conference Proceedings
4. Theoretical Treatments of Band Edges in SiC Polytypes at High Carrier Concentrations
Lindefelt, U. ; Persson, C.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.719-724,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off
Martinez, A. ; Lindefelt, U.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1335-1338,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
6.

Conference Proceedings
Conference Proceedings
6. Electronic Localization around Stacking Faults in Silicon Carbide
Iwata, H. ; Lindefelt, U. ; OEberg, S. ; Briddon, P.R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.529-532,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults
Lindefelt, U. ; Iwata, H. ; Oberg, S. ; Briddon, P.R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.907-912,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
8.

Conference Proceedings
Conference Proceedings
8. Theoretical Study of Cubic Polytype Inclusions in 4H-SiC
Iwata, H. ; Lindefelt, U. ; OEberg, S. ; Briddon, P.R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.533-536,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC
Martinez, A. ; Hjelm, M. ; Nilsson, H.E. ; Lindefelt, U.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1237-1240,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. Free Carrier Diffusion in 4H-SiC
Grivickas, P. ; Martinez, A. ; Mikulskas, I. ; Grivickas, V. ; Tomasiunas, R. ; Linnros, J. ; Lindefelt, U.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.353-356,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356