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23 results

Conference Proceedings

1. Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Raineri, V. ; Roccaforte, F. ; Libertino, S. ; Ruggiero, A. ; Massimino, V. ; Calcagno, L.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1167-1170, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Defect Evolution in Ion Implanted Silicon

Benton, J.L. ; Libertino, S. ; Eaglesham, D.J. ; Coffa, S.

Pub. info.:	Proceedings of the Fifth International Symposium on High Purity Silicon V. pp.328-340, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-13

Conference Proceedings

3. Ion-Beam-Injected Point Defects in Crystalline Silicon: Migration, Interaction, and Trapping Phenomena

Priolo, F. ; Privitera, V. ; Coffa, S. ; Libertino, S.

Pub. info.:	Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.71-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	439

Conference Proceedings

4. The Effect of Impurity Content and Ion Mass on the Depth Profiles of Vacancy-Type Defects in MeV-Implanted Si

Libertino, S. ; Coffa, S. ; Privitera, V. ; Priolo, F.

Pub. info.:	Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.83-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	439

Conference Proceedings

5. Point Defects Migration and Agglomeration in Si at Room Temperature: The Role of Surface and Impurity Content

Privitera, V. ; Coffa, S. ; Larsen, K. Kyllesbech ; Libertino, S. ; Mannino, G. ; Priolo, F.

Pub. info.:	Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.163-, 1997. Pittsburg, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	469

Conference Proceedings

6. The Effect of the Extra Ion on Residual Damage in MeV-Implanted Si

Libertino, S. ; Benton, J. L. ; Coffa, S. ; Jacobson, D. C. ; Eaglesham, D. J. ; Poate, J. M. ; Lavalle, M. ; Fuochi, P. G.

Pub. info.:	Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.187-, 1997. Pittsburg, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	469

Conference Proceedings

7. Characterization of Interstitial Defect Clusters in Ion-Implanted Si

Benton, J. L. ; Libertino, S. ; Coffa, S. ; Eaglesham, D. J.

Pub. info.:	Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.193-, 1997. Pittsburg, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	469

Conference Proceedings

8. Ion-Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena

Priolo, F. ; Privitera, V. ; Coffa, S. ; Libertino, S.

Pub. info.:	Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.53-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	438

Conference Proceedings

9. The Effect of Impurity Content and Ion Mass on the Depth Profiles of Vacancy-Type Defects in MeV-Implanted Si

Libertino, S. ; Coffa, S. ; Privitera, V. ; Priolo, F.

Pub. info.:	Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.65-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	438

10.

Conference Proceedings

10. The Effects of Impurity Co-Doping on the Electrical Properties of Erbium Ions in Crystalline silicon

Libertino, S. ; Coffa, S. ; Mosca, R. ; Gombia, E.

Pub. info.:	Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.113-, 1996. Pittsburgh. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	422

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Author: Libertino, S.