1.

Conference Proceedings
Conference Proceedings
1. Characterization of InGaN quantum wells grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source
Semendy, F. ; Li, L. K. ; Jurkovic, M. J. ; Wang, W. I.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.37.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
2.

Conference Proceedings
Conference Proceedings
2. P-type Mg-Doped GaN Grown by Molecular Beam Epitaxy Using Ammonnia as the Nitrogen Source
Yang, Z. ; Li, L. K. ; Wang, W. I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.169-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
3.

Conference Proceedings
Conference Proceedings
3. *High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer
Jurkovic, M. J. ; Li, L. K. ; Turk, B. ; Wang, W. I. ; Syed, S. ; Simonian, D. ; Stormer, H. L.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W8.8.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595