1.

Conference Proceedings
Conference Proceedings
1. Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors
Meyer, D. J. ; Dautrich, M. S. ; Lenahan, P. M. ; Lelis, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.593-598,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Pulsed-laser-deposited AlN films for high-temperature SiC MIS devices
Vispute, R. D. ; Patel, A. ; Baynes, K. ; Ming, B. ; Sharma, R. P. ; Venkatesan, T. ; Scozzie, C. J. ; Lelis, A. ; Zheleva, T. ; Jones, K. A.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.3.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
3.

Conference Proceedings
Conference Proceedings
3. Pulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor Research
Vispute, R. D. ; Enck, R. ; Patel, A. ; Ming, B. ; Sharma, R. P. ; Venkatesan, T. ; Scozzie, C. J. ; Lelis, A. ; McLean, F. B. ; Zheleva, T. ; Jones, K. A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1503-1506,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2
Wang, W. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Issacs-Smith, T. ; Williams, J. ; Jones, K.A. ; Lelis, A. ; Tipton, W. ; Scozzie, S. ; Agarwal, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1309-1312,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
Meyer, D.J. ; Bohna, N.A. ; Lenahan, P.M. ; Lelis, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.477-480,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Technical Paper
Technical Paper
6. 4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications.
Veliadis, V. ; Hearne, H. ; McNutt, T. ; Snook, M. ; Potyraj, P. ; Lelis, A.
Pub. info.: 2008 Power Systems Conference : SAE technical paper.  2008.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2008