1.

Conference Proceedings
Conference Proceedings
1. Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing
Wang, X.W. ; Bu, H.M. ; Laube, B.L. ; Caragianis-Broadbridge, C. ; Ma, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.993-996,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing
Wang, X.W. ; Bu, H.M. ; Laube, B.L. ; Caragianis-Broadbridge, C. ; Ma, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.993-996,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393