1.

Conference Proceedings
Conference Proceedings
1. On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C
Trauwaert,M.-A. ; Vanhellemont,J. ; Maes,H.E. ; Bavel,A.-M.Van ; Langouche,G. ; Stesmans,A. ; Clauws,P.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1147-1152,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
2.

Conference Proceedings
Conference Proceedings
2. Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C
Wahl,U. ; Correia,J.G. ; Langouche,G. ; Marques,J.G. ; Vantomme,A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1503-1508,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. Mossbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and AlxGal-XAS
Langouche,G. ; Bemelmans,H. ; Odeurs,J. ; Borghs,G. ; Potter,M.De ; Deraedt,W. ; Rossum,M.Van
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1245-1250,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
4.

Conference Proceedings
Conference Proceedings
4. The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si
Bavel,A.-M.Van ; Degroote,S. ; Vantomme,A. ; Stesmans,A. ; Langouche,G.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1515-1520,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
5.

Conference Proceedings
Conference Proceedings
5. Transition-Metal Silicide Layer Formation,the Phases of Mixed Silicides
Dezsi,L ; Fetzer,Cs. ; Szucs,I.S. ; Dekoster,J. ; Langouche,G.
Pub. info.: Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996.  pp.339-344,  1997.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 248-249
6.

Conference Proceedings
Conference Proceedings
6. Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation
Langouche,G. ; Wu,M.F. ; Wachter,J.De ; Pattyn,H. ; Bavel,A.-M.Van
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.803-808,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
7.

Conference Proceedings
Conference Proceedings
7. Co-Acceptor Complexes in Si
Bavel,A.-M.Van ; Langouche,G.
Pub. info.: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.267-272,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 117-118
8.

Conference Proceedings
Conference Proceedings
8. In Search of Co-Acceptor Pairs in Highly Doped p-Si:A Mossbauer Spectroscopy Study
Bavel,A,-M.Van ; Langouche,G.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.827-832,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
9.

Conference Proceedings
Conference Proceedings
9. Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al 3Ga 7As by Mossbauer Spectroscopy
Bemelmans,H. ; Borghs,G. ; Langouche,G.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.1105-1110,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147