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22 results

Conference Proceedings

1. Inspection of silicon wafer backsurfaces

Schmolke, R. ; Passek, F. ; Gerber, H.-A. ; Lambert, U. ; Puppe, G. ; Piontek, H. ; Wagner, P.

Pub. info.:	Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II. pp.448-457, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-22

Conference Proceedings

2. Discrimination of defects on epitaxial silicon wafers

Passek, F. ; Schmolke, R. ; Lambert, U. ; Puppe, G. ; Wagner, P.

Pub. info.:	Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II. pp.438-447, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-22

Conference Proceedings

3. CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS

Kissinger, G. ; Vanhellemont, J. ; Lambert, U. ; Dornberger, E. ; Sorge, R. ; Morgenstern, G. ; Grabolla, T. ; Graef, D. ; von Ammon, W. ; Wagner, P. ; Richter, H.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.1095-1112, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(2)

Conference Proceedings

4. SIMULATION OF NON-UNIFORM GROWN-IN VOID DISTRIBUTIONS IN CZOCHRALSKI IN SILICON CRYSTAL

Dornberger, E. ; Esfandyari, J. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; Dupret, F. ; von Ammon, W.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.490-502, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(1)

Conference Proceedings

5. GATE OXIDE RELATED BULK PROPERTIES OF OXYGEN DOPED FLOATING ZONE AND CZOCHRALSKI SILICON

Ammon, W.v. ; Ehlert, A. ; Lambert, U. ; Graef, D. ; Brohl, M. ; Wagner, P.

Pub. info.:	Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology. pp.136-147, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-10

Conference Proceedings

6. Oxygen Precipitation and Stacking Fault Formation in Wafers with a Transition from Vacancy-Rich to Interstitial-Rich

Kissinger, G. ; Morgenstern, G. ; Grabolla, T. ; Richter, H. ; Vanhellemont, J. ; Lambert, U. ; Graef, D.

Pub. info.:	Proceedings of the Fifth International Symposium on High Purity Silicon V. pp.158-169, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-13

Conference Proceedings

7. Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing

Kissinger, G. ; Grabolla, T. ; Morgenstern, G. ; Richter, H. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; von Ammon, W.

Pub. info.:	Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II. pp.74-87, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-22

Conference Proceedings

8. D-defects and metal-related flow patterns

Kissinger, G. ; Morgenstern, G. ; Richter, H. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; von Ammon, W. ; Wagner, P.

Pub. info.:	Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II. pp.32-39, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-22

Conference Proceedings

9. Simulation of grown-in voids in Czochralski silicon crystals

Dornberger, E. ; Esfandyari, J. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; Dupret, F. ; von Ammon, W.

Pub. info.:	Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II. pp.40-49, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-22

10.

Conference Proceedings

10. Recent Progress in Understanding Oxygen Precipitation in Silicon

Vanhellemont, J. ; Esfandyari, J. ; Obermeier, G. ; Dornberger, E. ; Graef, D. ; Lambert, U. ; Kissinger, G.

Pub. info.:	Proceedings of the Fifth International Symposium on High Purity Silicon V. pp.101-124, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-13

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