1.

Conference Proceedings
Conference Proceedings
1. Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics
Gila, B.P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J.R. ; Onstine, A.H. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.212-223,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
2.

Conference Proceedings
Conference Proceedings
2. GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates
Irokawa, Y. ; Luo, B. ; Kim, Jihyun ; Kang, B.S. ; LaRoche, J.R. ; Ren, F ; Pan, C.-C. ; Chen, G.T. ; Chyi, J.-I. ; Park, S.S. ; Park, Y.J. ; Gila, B.P. ; Abernathy, C.R. ; Balk, K.H. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.306-320,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
3.

Conference Proceedings
Conference Proceedings
3. The use of amorphous SiO and SiO2 to passivate AuGe based ohmic contact for GaAs ICs
LaRoche, J.R. ; Ren, F. ; Lothian, J.R. ; Hong, J. ; Lambers, E. ; Pearton, S.J.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.238-244,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
4.

Conference Proceedings
Conference Proceedings
4. AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances
Monier, C. ; Baca, A.G. ; Pearton, S.J. ; Ren, F. ; Chang, P.C. ; Zhang, L. ; LaRoche, J.R. ; Han, J. ; Shut, R.J.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.34-42,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
5.

Conference Proceedings
Conference Proceedings
5. Wet and dry etching characteristics of electron beam deposited SiO and SiO2
LaRoche, J.R. ; Ren, F. ; Lothian, J.R. ; Hong, J. ; Pearton, S.J. ; Lambers, E.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.259-264,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
6.

Conference Proceedings
Conference Proceedings
6. Device Processing For GaN High Power Electronics
Pearton, Stephen J. ; Cao, X.A. ; Cho, H. ; Lee, K.P. ; Monier, C. ; Ren, F. ; Dang, G. ; Zhang, A.P. ; Johnson, W. ; LaRoche, J.R. ; Gila, B.P. ; Abernathy, C.R. ; Shul, R.J. ; Baca, A.G. ; Han, J. ; Chyi, J.-I. ; Van Hove, J.M.
Pub. info.: Wide-bandgap electronic devices.  pp.T7.1-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
7.

Conference Proceedings
Conference Proceedings
7. Novel in-situ ion bombardment process for a thermally stable (>800 C) plasma deposited dielectric
Ren, F. ; Lothian, J.R. ; Pearton, S.J. ; Wilson, R.G. ; LaRoche, J.R. ; Lee, J.W. ; Johnson, D. ; Zavada, J.M.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.183-187,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573