1.

Conference Proceedings
Conference Proceedings
1. Laser therapy of infectious diseases: results and mechanism of therapeutic action
Ovsiannikov, V. ; Sologub, T. ; Pustashova, N. ; Kuznetsov, N. ; Masterova, O. ; Rakhmanova, A. ; Sizova, N. ; Karpushina, I.A.
Pub. info.: Laser Florence 2000 : a window on the laser medicine world : 18-22 October 2000, Florence, Italy.  pp.131-137,  2001.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4606
2.

Conference Proceedings
Conference Proceedings
2. GaN and AIN layers grown by nano epitaxial lateral overgrowth technique on porous substrates
Mynbaeva, M. ; Titkov, A. ; Kryzhanovski, A. ; Zubrilov, A. ; Ratnikov, V. ; Davydov, V. ; Kuznetsov, N. ; Mynbaev, K. ; Stepanov, S. ; Cherenkov, A. ; Kotousova, I. ; Tsvetkov, D. ; Dmitriev, V.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W2.7.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
3.

Conference Proceedings
Conference Proceedings
3. Silicon Carbide Epitaxial Layers Grown on SiC Wafers With Reduced Micropipe Density
Rendakova, S. ; Kuznetsov, N. ; Savkina, N. ; Rastegaeva, M. ; Andreev, A. ; Minbaeva, M. ; Morozov, A. ; Dmitriev, V.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.131-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
4.

Conference Proceedings
Conference Proceedings
4. Properties of GaN Homoepitaxial Layers Grown on GaN Epitaxial Wafers
Dmitriev, V. ; Nikolaev, A. ; Cherenkov, A. ; Tsvetkov, D. ; Stepanov, S. ; Kuznetsov, N. ; Nikitina, I. ; Kovarsky, A. ; Yagovkina, M. ; Davidov, V.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.451-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
5.

Conference Proceedings
Conference Proceedings
5. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method
Kuznetsov, N. ; Bauman, D. ; Gavrilin, A. ; Kalinina, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1313-1316,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode
Kakanakov, R. ; Kassamakova, L. ; Hristeva, N. ; Lepoeva, G. ; Kuznetsov, N. ; Zekentes, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.917-920,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
Kalinina, E. V. ; Zubrilov, A. ; Solov'ev, V. ; Kuznetsov, N. ; Hallen, A. ; Konstantinov, A. ; Karlsson, S. ; Rendakova, S. ; Dmitriev, V.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.505-508,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
8.

Conference Proceedings
Conference Proceedings
8. Reliability of 4H-SiC p-n Diodes on LPE Grown Layers
Sarov, G. ; Kakanakov, R. ; Cholakova, T. ; Kassamakova, L. ; Hristeva, N. ; Lepoeva, G. ; Philipova, P. ; Kuznetsov, N. ; Zekentes, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.929-932,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode
Kakanakov, R. ; Kassamakova, L. ; Hristeva, N. ; Lepoeva, G. ; Kuznetsov, N. ; Zekentes, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.917-920,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method
Kuznetsov, N. ; Bauman, D. ; Gavrilin, A. ; Kalinina, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1313-1316,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393