1.

Conference Proceedings
Conference Proceedings
1. DEVELOPMENT OF INFRARED DETECTORS BASED ON TYPE II, InAsSb STRAINED-LAYER SUPERLATTICES
Kurtz, Steven R.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.163-168,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
2.

Conference Proceedings
Conference Proceedings
2. * Quantum-Confined Stark Effect and Polarization Field in Single Quantum Well InGaN/GaN LEDs
Kaplar, Robert J. ; Kurtz, Steven R. ; Koleske, Daniel D.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.813-824,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
3.

Conference Proceedings
Conference Proceedings
3. Comparison Of Deep Level Spectra of MBE- and MOCVD-Grown InGaAsN
Kaplar, R.J. ; Ringel, S.A. ; Kurtz, Steven R. ; Allerman, A.A. ; Klem, J.F.
Pub. info.: Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.403-408,  2002.  Warrendale, Pa.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 719
4.

Conference Proceedings
Conference Proceedings
4. The Role of Nitrogen-Induced Localization and Defects in InGaAsN (= 2 N):Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition
Kurtz, Steven R. ; Allerman, A.A. ; Klem, J.F. ; Sieg, R.M. ; Seager, C.H. ; Jones, E.D.
Pub. info.: Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A.  pp.21-28,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 692