1.

Conference Proceedings
Conference Proceedings
1. pVD High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-State Drive Current
Niwa, M. ; Mitsuhashi, R. ; Yamamoto, K. ; Hayashi, S. ; Rothchild, A. ; Kubicek, S. ; De Gendt, S. ; Biesemans, S.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.1-17,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
2.

Conference Proceedings
Conference Proceedings
2. Emerging Device Solutions for the Post-Classical CMOS Era*
De Meyer, K. ; Collaert, N. ; Kubicek, S. ; Kottontharayil, A. ; van Meer, H. ; Verheyen, P.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.291-305,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-6
3.

Conference Proceedings
Conference Proceedings
3. 45. TaN metal gate MOSFETs with aggressively scaled HfO2 dielectrics
Lander, R. ; Schram, T. ; Lulan, G.S. ; hooker, J. ; Vertommen, J. ; Lee, S. ; de Weerd, W. ; Boullart, W. ; van Elshocht, S ; Carter, R. ; Kubicek, S. ; Demeyer, K. ; De Gendt, S. ; Heyns, M.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.367-374,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
4.

Conference Proceedings
Conference Proceedings
4. 0.13 μm CMOS Technology with Optimized Poly-Si/No-Oxide Gate Stack
Kubicek, S. ; Jansen, P. ; Badenes, G. ; Schaekers, M. ; Koldyaev, V. ; Deferm, L. ; De Meyer, K. ; Kerr, D. ; Naem, A.
Pub. info.: ULSI process integration : proceedings of the first international symposium.  pp.193-202,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-18
5.

Conference Proceedings
Conference Proceedings
5. Freeze-out Effects on the Characteristics of Deep Submicron Si MOSFETs in the 77 to 300 K Range
Croon, J. ; Biesemans, S. ; Kubicek, S. ; Simoen, E. ; De Meyer, K. ; Claeys, C.
Pub. info.: Proceedings of the fourth Symposium on Low Temperature Electronics and High Temperature Superconductivity.  pp.187-198,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-2
6.

Conference Proceedings
Conference Proceedings
6. 27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications
Kittl, J. A. ; Lauwers, A. ; Pawlak, M. A. ; Demeurisse, C. ; Anil, K. G. ; Veloso, A. ; van Dal, M. J. H. ; Schram, T. ; Brijs, B. ; Kaiser, M. ; Kubicek, S. ; Cunniffe, J. ; Verbeeck, R. ; Vrancken, C. ; Biesemans, S. ; Maex, K.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.225-232,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
7.

Conference Proceedings
Conference Proceedings
7. High-k Dielectrics Integration Prospects (Invited paper)
Kubicek, S. ; Van Elshocht, S. ; Delabie, A. ; Yamamoto, K. ; Beckx, S. ; Claes, M. ; Van Hoornick, N. ; Kwak, D.-H. ; Hyun, S. ; Rothschild, A. ; Veloso, A. ; Anil, K. ; Lujan, G. ; Kittle, J.A. ; Lauwers, A. ; Kaushik, V. ; Niwa, M. ; De Gendt, S. ; Heyns, M. ; Jurczak, M. ; Biesemans, S.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.169-192,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
8.

Conference Proceedings
Conference Proceedings
8. Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD
Elshocht, S.Van ; Brijs, B. ; Caymax, M. ; Conard, T. ; Gendt, S.De ; Kubicek, S. ; Meuris, M. ; Onsia, B. ; Richard, O. ; Teerlinck, I. ; Steenbergen, J.Van ; Zhao, C. ; Heyns, M.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.287-292,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
9.

Conference Proceedings
Conference Proceedings
9. 13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets
De Gendt, S. ; Brunco, D. ; Caymax, M. ; Canard, T. ; Date, L. ; Delabie, A. ; Deweerd, W. ; Groeseneken, G. ; Houssa, M. ; Hyun, S. ; Kaushik, V. ; Kubicek, S. ; Maes, J. ; Pantisano, L. ; Ragnarsson, L. ; Rohr, E. ; Schram, T. ; Shimamoto, Y. ; Sleeckx, E. ; Vandervorst, W. ; Van Elshocht, S. ; Yamamoto, K. ; Witters, T. ; Zhao, C. ; Zimmerman, P. ; Heyns, M. (Invited Paper)
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.109-117,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
10.

Conference Proceedings
Conference Proceedings
10. (10.2) 1:45 -2:15 PM - GermaniumDeep-sub micron PMOS Transistors with Etched TaN Metal Gate on a High-K Dielectric, Fabricated in a 200mm Prototyping Line (Invited)
De Jaeger, M. Meuris B. ; Kubicek, S. ; Verheyena, P. ; Van Steenbergen, J. ; Lujan, G. ; Kunnen, E. ; Sleeckx, E. ; Teerlinck, I. ; Van Elshocht, S. ; Delabie, A. ; Lindsay, R. ; Satta, A. ; Schram, T. ; Chiarella, T. ; Degraeve, R. ; Richard, O.
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.693-700,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07