1.

Conference Proceedings
Conference Proceedings
1. 28 Growth and characterization of Al2O3:HfO2 nanolaminate films deposited by Atomic Layer Deposition
D'Emic, C.P. ; Gusev, E.P. ; Copel, M. ; Newbury, I. ; Unvel, H. ; Kozlowski, P. ; Bruley, J. ; Murphy, R.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.217-224,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
2.

Conference Proceedings
Conference Proceedings
2. Processing and Characterization of RTCVD Silicon Nitride and Oxynitride Grown in a Single-Wafer RT Cluster Tool
D'Emic, C.P. ; Gusev, E.P. ; Newbury, I. ; Kozlowski, P. ; Chan, K. ; Zabel, T. ; Varekamp, P.
Pub. info.: Rapid thermal and other short-time processing technologies : proceedings of the international symposium.  pp.247-154,  2000.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-9
3.

Conference Proceedings
Conference Proceedings
3. * Ultra Thin High-K Dielectrics Grown by Atomic Layer Deposition: A Comparative Study of ZrO2, HfO2, Y2O3 and Al2O3
Gusev, E.P. ; Canter, E. ; Copel, M. ; Gribelyuk, M. ; Buchanan, D.A. ; Okorn-Schmidt, H. ; D'Emic, C. ; Kozlowski, P. ; Tuominen, M. ; Linnermo, M. ; Haukka, S.
Pub. info.: Rapid thermal and other short-time processing technologies II : proceedings of the international symposium.  pp.189-196,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-9
4.

Conference Proceedings
Conference Proceedings
4. Sub-30 nm Abrupt Junction Formation in Strained Si/Si 1-xGe x, CMOS Device
Lee, K.L. ; Cardone, F. ; Saunders, P. ; Kozlowski, P. ; Ronsheim, P. ; Zhu, H. ; Li, J. ; Chu, J. ; Chan, K. ; Ieong, M.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.71-81,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-01
5.

Conference Proceedings
Conference Proceedings
5. Transient Enhanced Diffusion and Dose Loss of Indium in Silicon
Dokumaci, O. ; Ronsheim, P. ; D'emic, C. ; Domenicucci, A. G. ; Hegde, S. ; Kozlowski, P. ; Wong, H-S. P.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.205-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
6.

Conference Proceedings
Conference Proceedings
6. (14.1) 10:05 - 10:25AM - Retardation of Arsenic Diffusion in Silicon-Germanium by co-Implantation
Dokumaci, O. ; Ronsheim, P. ; Mocuta, A. ; Mocuta, D. ; Kozlowski, P. ; Chidambarrao, D. ; Saunders, P. ; Chen, H. (IBM)
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.893-902,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07