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Conference Proceedings

1. The Physical and Electrical Properties of Poly Sil-xGex as a Gate Electrode Material

Kang, S.-K. ; Ko, D.-H. ; Ahn, T.H. ; Yeo, I.S. ; Lee, K.C. ; Lee, T.W. ; Lee, Y.H.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.581-590, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-2

Conference Proceedings

2. A Study on the Solid Phase Reaction and Thermal Stability in the Ni-Sil-x Gex System Using Rapid Thermal Annealing (RTA) Process

Choi, H.-J. ; Kim, H.-Y. ; Ko, D.-H. ; Ku, J.-H. ; Choi, C.-J. ; Choi, S. ; Fujihara, K. ; Kang, H.K. ; Yang, M-H. ; Yang, C.-W.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.591-600, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-2

Conference Proceedings

3. Formation and Properties of Co-Suicide by Using Col-x Tax Alloy

Kim, M.-J. ; Lee, D.-H. ; Ko, D.-H. ; Ku, J.-H. ; Choi, S. ; Fujihara, K. ; Kang, H.-K. ; Oh, S-H. ; Park, C.-G. ; Lee, H.-J.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.571-580, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-2

Conference Proceedings

4. Ni Salicide Technology for Deep Sub-Quarter Micron Transistor

Choi, C.-J. ; Ku, J.-H. ; Choi, S. ; Fujihara, K. ; Kang, H.-K. ; Moon, J.-T. ; Choi, H.-J. ; Ko, D.-H.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.565-570, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-2

Conference Proceedings

5. A Study on the Microstructures and Electrical Properties of ZrO2 Thin Films

Nam, S.-W. ; Yoo, J.-H. ; Kim, H.-Y. ; Ko, D.-H. ; Yang, C.-W.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.547-554, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-2

Conference Proceedings

6. (4.17) 8:13 - 8:16 PM - Growth of Relaxed Si1_xGex by Using Oxidation of Si1_xGex

Min, B. G. ; Jeon, K. S. ; Pae, Y. H. ; Ko, D.-H. ; Cho, M.-H. ; Lee, T.-W.(Yonsei Univ.)

Pub. info.:	SiGe: materials, processing, and devices : proceedings of the First international symposium. pp.279-280, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-07

Conference Proceedings

7. Evolution Of Sputtered Hfo_2 Thin Films Upon Annealing

Nam, S. ; Nam, S.W. ; Yoo, J.H. ; Ko, D.-H. ; Ku, Ja-Hum ; Choi, Siyoung

Pub. info.:	Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.. pp.221-226, 2002. Warrendale. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	716

Conference Proceedings

8. N Type Dopant Activation behaviors of poly Si1-xGex with Ge contents and activation temperature

Kang, S.-K ; Kim, J.J. ; Kang, H.B. ; Yang, C.W. ; Ahn, T.H. ; Yeo, I.S. ; Lee, T.W. ; Lee, Y.H. ; Ko, D.-H.

Pub. info.:	Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology. pp.268-275, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-17

Conference Proceedings

9. The Eletrical characteristics of W/WNx/poly Si1-xGex and the MOSCAP structures with W/WNx/poly Si1-xGex gates stack

Kang, S.-K ; Kim, J.J. ; Kang, H.B. ; Yang, C.W. ; Ahn, T.H. ; Yeo, I.S. ; Lee, T.W. ; Lee, Y.H. ; Ko, D.-H.

Pub. info.:	Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology. pp.276-283, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-17

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Conference Proceedings

10. The Electrical Characteristics of the MOSCAP Structures with W/WNx/poly Si1-xGex Gates Stack

Kang, S.-K. ; Kim, J.J. ; Ko, D.-H. ; Ahn, T.H. ; Yeo, I.S. ; Lee, T.W. ; Lee, Y.H.

Pub. info.:	Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A.. 2002. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	670

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Author: Ko, D.-H.