1.

Conference Proceedings
Conference Proceedings
1. INVITED: COMPUTER SIMULATION OF IMPURITY GET?ERING CAPABILITY IN SILICON FOR CURRENT GETTERING TECHNIQUES
Hayamizu, Y. ; Tobe, S. ; Takeno, H. ; Kitagawara, Y.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1080-1094,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
2.

Conference Proceedings
Conference Proceedings
2. AN ULTRASENSITIVE METHOD TO REVEAL DEFECTS THAT DEGRADE THE LOCALIZED RECOMBINATION LIFETIME OF THE NEAR SURFACE REGION OF BULK Si AND THIN EPILAYERS
Higgs, V. ; Chin, F. ; Wang, X. ; Kitagawara, Y. ; Yoshida, T.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1564-1575,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
3.

Conference Proceedings
Conference Proceedings
3. DIRECT OBSERVATION OF MEDIUM FIELD BREAKDOWN ORIGIN ON MOS CAPACITORS CONTAINING GROWN-IN CZ CRYSTAL DEFECTS
Tamatsuka, M. ; Radzimski, Z. ; Rozgonyi, G.A. ; Oka, S. ; Kato, M. ; Kitagawara, Y.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1593-1609,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
4.

Conference Proceedings
Conference Proceedings
4. Bulk Lifetime Decreasing Phenomena Induced by Light-Illumination in High-Purity P-Type Cz-Si Crystals
Yoshida, T. ; Kitagawara, Y.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.450-454,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
5.

Conference Proceedings
Conference Proceedings
5. Capability of Reliable Bulk Lifetime Evaluation in High-Purity Si by a Photoconductive Decay Measurement with a Chemical Passivation Technique
Yoshida, T. ; Kitagawara, Y.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.455-461,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
6.

Conference Proceedings
Conference Proceedings
6. INFLUENCE OF HEAVY BORON DOPING ON OXYGEN PRECIPITATION CHARACTERISTICS OF CZOCHRALSKI SILICON CRYSTALS AND ITS COMPUTER SIMULATION
Takeno, H. ; Aihara, K. ; Hayamizu, Y. ; Kitagawara, Y.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1012-1022,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
7.

Conference Proceedings
Conference Proceedings
7. Systematic Analyses of Practical Problems Related to Defects and Metallic Impurities in Silicon
Kitagawara, Y. ; Takeno, H. ; Tobe, S. ; Hayamizu, Y. ; Koide, T. ; Takenaka, T.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.3-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510