1.

Conference Proceedings
Conference Proceedings
1. Shallow-Impurity-Related Photoluminescence in Homoepitaxial GaN
Kirilyuk, V. ; Zielinski, M. ; Christianen, P. C. M. ; Zauner, A. R. A. ; Weyher, J. L. ; Hageman, P.R. ; Larsen, P. K.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
2.

Conference Proceedings
Conference Proceedings
2. Growth of GaN Epilayers on Si(111) Substrates Using Multiple Buffer Layers
Hageman, P.R. ; Haffouz, S. ; Grzegorczk, A. ; Kirilyuk, V. ; Larsen, P.K.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.105-110,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
3.

Conference Proceedings
Conference Proceedings
3. Physical properties of silicon doped heteroepitaxial MOCVD grown GaN: Influence of doping level and stress
Hageman, P. R. ; Kirilyuk, V. ; Zauner, A. R. A. ; Bauhuis, G. J. ; Larsen, P. K.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W5.9.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
4.

Conference Proceedings
Conference Proceedings
4. Homoepitaxial growth on misoriented GaN substrates by MOCVD
Zauner, A. R. A. ; Schermer, J. J. ; Enckevort, W. J. P. van ; Kirilyuk, V. ; Weyher, J. L. ; Grzegory, I. ; Hageman, P. R. ; Larsen, P. K.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W6.3.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595