1.

Conference Proceedings
Conference Proceedings
1. IR absorption in mono-isotopic germanium
Khirunenko,L.I. ; Shakhovtsov,V.I. ; Shinkarenko,V.K.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.425-432,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
2.

Conference Proceedings
Conference Proceedings
2. Isotopic shifts of the rotational states of interstitial oxygen in germanium
Aichele,N. ; Gommel,U. ; K.Laｦﾂmann ; Maier,F. ; Zeller,F. ; Haller,E.E. ; Itoh,K.M. ; Khirunenko,L.I. ; Shakhovtsov,V.I. ; Pajot,B. ; Fogarassy,E. ; Mtissig,H.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.47-52,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. Matrix-induced isotope shift of a vibrational mode of interstitial oxygen in germanium
Pajot,B. ; Artacho,E. ; Khirunenko,L.I. ; Itoh,K. ; Haller,E.E.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.41-46,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. The influence of isovalent doping on diffusion of interstitial oxygen in silicon
Khirunenko,L.I. ; Pomozov,Yu.V. ; Shakhovisov,V.I. ; Shumov,V.V.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1773-1776,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
5.

Conference Proceedings
Conference Proceedings
5. The Influence of Germanium on the Formation and Annealing of Radiation Damage in Silicon
Italyantsev,A.G. ; Khirunenko,L.I. ; Mordkovich,V.N. ; Rubinova,E.E. ; Temper,E.M. ; Trunov,V.A. ; Shakhovtsov,V.I. ; Shpinar,L.I. ; Yashnik,V.I.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1163-1168,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
6.

Conference Proceedings
Conference Proceedings
6. Diffusion and precipitation of oxygen in silicon doped with germanium
Khirunenko,L.I. ; Shakhovisov,V.I. ; Shumov,V.V.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1767-1772,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
7.

Conference Proceedings
Conference Proceedings
7. Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si
Khirunenko,L.I. ; Shakovtsov,V.I. ; Yashnik,V.I.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1385-1388,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
8.

Conference Proceedings
Conference Proceedings
8. Reactions between Point Defects in Silicon Doped with Germanium
Khirunenko,L.I. ; Shakhovtsov,V.I. ; Shumov,V.V. ; Yashnik,V.I.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1381-1384,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201