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20 results

Conference Proceedings

1. VISIBLE ELECTROLUMINESCENCE FROM PN JUNCTION TYPE μc-SiC/POROUS Si/c-Si STRUCTURES

Futagi, T. ; Matsumoto, T. ; Katsuno, M. ; Ohta, Y. ; Mimura, H. ; Kitamura, K.

Pub. info.:	Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.389-394, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	283

Conference Proceedings

2. Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Clystals

Nakabayashi, M. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.699-702, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC

Nakashima, S. ; Nakatake, Y. ; Yano, Y. ; Harima, H. ; Ohtani, N. ; Katsuno, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.633-636, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-Ray Diffractometry

Katsuno, M. ; Ohtani, N. ; Aigo, T. ; Yashiro, H. ; Kanaya, M.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.493-496, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

5. Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face

Kojima, K. ; Ohno, T. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishio, J. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.925-928, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

6. Growth and Defect Reduction of Bulk SiC Crystals

Ohtani, N. ; Fujimoto, T. ; Katsuno, M. ; Aigo, T. ; Yashiro, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.29-34, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC

Katsuno, M. ; Ohtani, N. ; Fujimoto, T. ; Aigo, T. ; Yashiro, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.55-58, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots

Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Aigo, T. ; Yashiro, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.47-50, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. Micropipe Formation Model via Surface Step Interaction

Ohtani, N. ; Katsuno, M. ; Fujimoto, T. ; Aigo, T. ; Yashiro, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.99-102, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

Kojima, K. ; Ohno, T. ; Senzaki, J. ; Fukuda, K. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishino, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.195-198, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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Author: Katsuno, M.